Search results for "Noise spectral density"

Measurement of ultra-low heating rates of a single antiproton in a cryogenic Penning trap

2019

Physical review letters 122(4), 043201 (2019). doi:10.1103/PhysRevLett.122.043201

Capacity Analysis in Downlink WCDMA Systems Using Soft Handover Techniques With SIR-Based Power Control and Site Selection Diversity Transmission

2006

This work analyzes the downlink performance of a WCDMA system with site selection diversity transmission power control (SSDT) during soft handover mode. Signal to interference ratio (SIR) power control techniques are modeled and used in the simulations of this analysis. The study is focused on finding the optimum soft handover margin in terms of maximum system capacity under energy-per-bit to noise spectral density ratio (Eb/N0) quality requirements. The results of this analysis show an increase in user capacity of about 15 -20 % for optimum soft handover margins of 5 – 5.5 dB. Nevertheless, the resources required (number of scrambling codes) by base station increase faster than the number …

Photothermal excitation setup for a modified commercial atomic force microscope

2014

High-resolution imaging in liquids using frequency modulation atomic force microscopy is known to suffer from additional peaks in the resonance spectrum that are unrelated to the cantilever resonance. These unwanted peaks are caused by acoustic modes of the liquid and the setup arising from the indirect oscillation excitation by a piezoelectric transducer. Photothermal excitation has been identified as a suitable method for exciting the cantilever in a direct manner. Here, we present a simple design for implementing photothermal excitation in a modified Multimode scan head from Bruker. Our approach is based on adding a few components only to keep the modifications as simple as possible and …

Experimental determination of the kurtosis of RF noise in microwave low-noise devices

2000

Abstract The degree of the Gaussian nature of the white noise present in microwave low-noise devices is experimentally investigated. The chosen experimental technique consists of simultaneously digitizing four versions of the noise which are amplified by four parallel independent amplifiers. The four independent signals are then used to compute the second, and, to a good approximation, the fourth moment of the noise. The ratio of the fourth moment to the square of the second moment is the kurtosis of the noise. Gaussian processes are characterized by a kurtosis equal to 3. A deviation from this value gives an indication about the degree of non-Gaussian nature of the noise. By using this tec…

Skewness and kurtosis of 1/f noise in semiconductor devices

2000

An experimental investigation of the third and fourth moments of the 1/f noise of two different electronic devices is reported. The skewness and the kurtosis of the noise voltage data are estimated. Although the devices under investigation have similar noise power spectral density, the time waveforms are shown to have slightly different statistical properties. In both cases, a small deviation from Gaussian distribution is observed.

Three Different Methods for Determining the Microwave Noise Parameters of HEMT's at Decreasing Temperatures

1998

The noise characteristics of any transistor are usually represented by means of four parameters which are frequency-, bias- and temperature-dependent, similarly to the scattering parameters. The noise parameters are determined by a standard indirect procedure based on multiple noise figure measurements and appropriate data processing techniques requiring a complex instrumentation set-up and skilled operators. As an alterative way, we have shown that the noise parameters of packaged HEAMT's can be computed with very good accuracy from the analysis of a noisy circuit model derived from the scattering parameters plus a single noise figure measurement. A third way exists for the determination o…

On the determination of device noise and gain parameters

1979

The least-squares fitting of measured noise figures and gains versus input termination admittance is an established procedure to determine linear two-port noise and gain parameters. Unfortunately, the method is liable to the serious inconvenience of yielding often erroneous results or even results without physical meaning. Some criteria are suggested which allow the carrying out of measurements in such a manner as to safely avoid the above drawbacks.

Complete characterization of low-noise devices at microwave frequencies: two alternative procedures for HEMTs

1995

Signal to Noise Ratio of Silicon Photomultipliers measured in the Continuous Wave Regime

2014

We performed a Signal to Noise Ratio characterization, in the continuous wave regime, at different bias voltages, frequencies and temperatures, on a novel class of silicon photomultipliers fabricated in planar technology on silicon p-type substrate. Signal to Noise Ratio has been measured as the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the Root Mean Square deviation of the overall current flowing to the device. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current. We have also performed a comparison between our SiPMs and a photomultiplier tube in terms of Signal to Noise Ratio, as a function …

Typical Aspects of the Microwave Noise Performance of HEMTs at Decreasing Temperatures

1996

In analog signal processing at microwave frequencies the noise performance of active devices is of fundamental importance for the accurate design of low-noise amplifiers. To this aim, the determination of the four noise parameters F O , Γ O (complex variable) and Rn has to be accomplished together with the usual scattering parameter measurements vs. frequency. In addition, the dependence of the device performance vs. temperature is of interest for circuit applications characterized by harsh environmental conditions. In this work the noise behavior of high electron mobility transistors has been investigated by means of measurements and modeling in the 2-18 GHz frequency range and as a functi…